samhop microelectronics corp. symbol v ds v gs i dm a i d units parameter 60 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) max 60v 48a 9.0 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. to-252 and to-251 package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous -pulsed a 1 details are subject to change without notice. t c =25 c g s stu sris to-252aa(d-pa) std sris to-251(i-pa) p d c -55 to 150 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja 3 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy d t c =70 c w 361 48 140 42 38.4 27 c stu607s STD607S green product ver 1.0 www.samhop.com.tw oct,12,2015 g s d a c
symbol min typ max units bv dss 60 v 1 i gss 100 na v gs(th) v g fs s c iss 1670 pf c oss 341 pf c rss 228 pf 53 75 46 23 t d(on) ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =30v i d =1a v gs =10v r gen = 6 ohm rise time turn-off delay time fall time turn-on delay time v ds =10v , i d =24a input capacitance output capacitance dynamic characteristics forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =48v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics b f=1.0mhz b www.samhop.com.tw 2 v sd nc q gs nc q gd 4 12 gate-drain charge gate-source charge diode forward voltage v ds =30v,i d =24a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =8a 0.77 1.3 v 2 3 4 49 oct,12,2015 ver 1.0 stu607s STD607S 7.5 m ohm v gs =10v , i d =24a r ds(on) drain-source on-state resistance 9.0 q g nc 26 total gate charge v ds =30v,i d =24a,v gs =10v notes a.pulse test:pulse width < 10us, duty cycle < 1%. b.guaranteed by design, not subject to production testing. c.drain current limited by maximum junction temperature. d.starting t j =25 c,l=0.5mh,v dd = 30v.(see figure13) e.mounted on fr4 board of 1 inch 2 , 2oz. _ _
stu607s STD607S ver 1.0 www.samhop.com.tw oct,12,2015 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 80 60 40 0 0 0.5 1 1.5 2 2.5 3 v gs =10v 35 28 21 14 7 0 0 1 6 5 4 3 2 tj=125 c -55 c 25 c 18 15 12 9 6 3 2.0 1.8 1.6 1.4 1.2 1.0 0 100 75 25 50 125 150 v gs =10v i d =24a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 20 v gs =10v 0.1 20 40 50 80 100 0 0 v ds =v gs i d =250ua 100 v gs =5v v gs =7v v gs =6v
www.samhop.com.tw 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0 30 25 20 15 10 5 0 2 4 68 10 i d =24a 25 c 75 c 125 c 2500 1500 1000 500 0 10 15 20 25 30 0 5 v ds =30v i d =24a 0 10 8 6 4 2 0 4 81216 20 24 28 32 110 100 10 100 1000 0.1 1 10 100 10 1 0.1 v gs =10v single pulse t c =25 c 20 10 1 0 0.2 0.4 0.6 0.8 1.0 25 c 75 c 125 c vds=30v,id=1a vgs=10v 100 1ms 10 m s dc r ds ( o n ) l imit oct,12,2015 ver 1.0 stu607s STD607S td(on) t f 100us tr 1 0 us td(off ) ciss coss crss 2000
www.samhop.com.tw 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve t p i as figure 13a. uncamped inductive test circuit unclamped inductive waveforms r g i as 0.01 t p d.u.t l v ds + - 20v v dd figure 13b. v (br)dss 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. 2. 3. 4. single pulse 1 r ja r ja(t)=r(t)* r ja=see datasheet t jm -t a =p dm * r ja(t) duty cycle,d= t 1 / t 2 oct,12,2015 ver 1.0 stu607s STD607S
ver 1.0 www.samhop.com.tw oct,12,2015 6 to-252 l3 b2 b l2 l a1 l1 a max min c c2 d d1 e h e1 millimeters symbols e b3 e b3 h l3 d l4 b2 b e 1 2 3 a c2 c e1 d1 l1 a1 l2 detail "a" detail "a" 2.200 2.380 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.210 2.286 bsc 6.400 6.731 4.318 9.400 10.400 l4 1.400 1.770 2.743 ref l 0.508 bsc 0.890 1.270 0.640 1.010 0 10 4.900 5.380 stu670s std670s
www.samhop.com.tw 7 package outline dimensions to-251 b3 d e d1 12 3 l4 e l5 h b4 b2 b e1 a c2 l c symbol millimeters min max e 6.350 6.731 l 3.700 4.400 l4 0.698 ref l5 0.972 1.226 5.970 d6.223 h 9.670 11.450 b 0.630 0.850 b2 0.760 1.140 4.950 b3 5.460 b4 0.450 0.550 e 2.286 bsc a 2.180 2.390 c 0.400 0.610 0.400 0.610 c2 d1 5.100 e1 4.318 ver 1.0 oct,12,2015 stu607s STD607S
ver 1.0 www.samhop.com.tw oct,12,2015 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 - 0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 - 0 2.2 ? 13.0 + 0.5 - 0.2 10.6 2.0 2 0.5 " a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h stu607s STD607S
www.samhop.com.tw 9 top marking definition to-252 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) stu607s smc internal code no. (a,b,c...z) ver 1.0 stu607s STD607S oct,12,2015
www.samhop.com.tw 10 top marking definition to-251 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) STD607S smc internal code no. (a,b,c...z) ver 1.0 oct,12,2015 stu607s STD607S
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